@article{e7dea517bf1e466a866c52d12ec829d7,
title = "Morphology characterization of argon-mediated epitaxial graphene on C-face SiC",
abstract = "Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.",
author = "Tedesco, {J. L.} and Jernigan, {G. G.} and Culbertson, {J. C.} and Hite, {J. K.} and Y. Yang and Daniels, {K. M.} and Myers-Ward, {R. L.} and Eddy, {C. R.} and Robinson, {J. A.} and Trumbull, {K. A.} and Wetherington, {M. T.} and Campbell, {P. M.} and Gaskill, {D. K.}",
note = "Funding Information: The authors acknowledge the Office of Naval Research and Defense Advanced Research Projects Agency Carbon Electronics for RF Applications program for funding. J.L.T. and J.K.H. acknowledge the American Society for Engineering Education for support through Naval Research Laboratory Postdoctoral Fellowships. Y.Y. and K.M.D. acknowledge support from the Naval Research Enterprise Intern Program. ",
year = "2010",
month = may,
day = "31",
doi = "10.1063/1.3442903",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "22",
}