Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

J. L. Tedesco; G. G. Jernigan; J. C. Culbertson; J. K. Hite; Y. Yang; K. M. Daniels; R. L. Myers-Ward; C. R. Eddy; J. A. Robinson; K. A. Trumbull; M. T. Wetherington; P. M. Campbell; D. K. Gaskill

doi:10.1063/1.3442903

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

J. L. Tedesco
, G. G. Jernigan
, J. C. Culbertson
, J. K. Hite
, Y. Yang
, K. M. Daniels
, R. L. Myers-Ward
, C. R. Eddy
, J. A. Robinson
, K. A. Trumbull
, M. T. Wetherington
, P. M. Campbell
, D. K. Gaskill

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

Original language	English (US)
Article number	222103
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3442903
State	Published - May 31 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3442903

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Tedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., & Gaskill, D. K. (2010). Morphology characterization of argon-mediated epitaxial graphene on C-face SiC. Applied Physics Letters, 96(22), Article 222103. https://doi.org/10.1063/1.3442903

@article{e7dea517bf1e466a866c52d12ec829d7,

title = "Morphology characterization of argon-mediated epitaxial graphene on C-face SiC",

abstract = "Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.",

author = "Tedesco, \{J. L.\} and Jernigan, \{G. G.\} and Culbertson, \{J. C.\} and Hite, \{J. K.\} and Y. Yang and Daniels, \{K. M.\} and Myers-Ward, \{R. L.\} and Eddy, \{C. R.\} and Robinson, \{J. A.\} and Trumbull, \{K. A.\} and Wetherington, \{M. T.\} and Campbell, \{P. M.\} and Gaskill, \{D. K.\}",

note = "Funding Information: The authors acknowledge the Office of Naval Research and Defense Advanced Research Projects Agency Carbon Electronics for RF Applications program for funding. J.L.T. and J.K.H. acknowledge the American Society for Engineering Education for support through Naval Research Laboratory Postdoctoral Fellowships. Y.Y. and K.M.D. acknowledge support from the Naval Research Enterprise Intern Program. ",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3442903",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

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TY - JOUR

T1 - Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

AU - Tedesco, J. L.

AU - Jernigan, G. G.

AU - Culbertson, J. C.

AU - Hite, J. K.

AU - Yang, Y.

AU - Daniels, K. M.

AU - Myers-Ward, R. L.

AU - Eddy, C. R.

AU - Robinson, J. A.

AU - Trumbull, K. A.

AU - Wetherington, M. T.

AU - Campbell, P. M.

AU - Gaskill, D. K.

N1 - Funding Information: The authors acknowledge the Office of Naval Research and Defense Advanced Research Projects Agency Carbon Electronics for RF Applications program for funding. J.L.T. and J.K.H. acknowledge the American Society for Engineering Education for support through Naval Research Laboratory Postdoctoral Fellowships. Y.Y. and K.M.D. acknowledge support from the Naval Research Enterprise Intern Program.

PY - 2010/5/31

Y1 - 2010/5/31

N2 - Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

AB - Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

UR - https://www.scopus.com/pages/publications/77953584605

UR - https://www.scopus.com/pages/publications/77953584605#tab=citedBy

U2 - 10.1063/1.3442903

DO - 10.1063/1.3442903

M3 - Article

AN - SCOPUS:77953584605

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222103

ER -

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

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