Multi-gate modulation doped In0.7Ga0.3As quantum well FET for ultra low power digital logic

L. Liu; V. Saripalli; E. Hwang; V. Narayanan; S. Datta

doi:10.1149/1.3569923

Multi-gate modulation doped In_0.7Ga_0.3As quantum well FET for ultra low power digital logic

L. Liu, V. Saripalli, E. Hwang, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Multi-gate modulation doped In_0.7Ga_0.3As quantum well FETs (MuQFETs) are simulated, fabricated and analyzed in detail. The devices operate in both classical and non-classical quantum regime. Due to its robust electrostatics, its excellent channel transport properties and its versatile classical and quantum mode operation capability, In_0.7Ga _0.3As MuQFET is promising device architecture for future ultra low power information processing applications.

Original language	English (US)
Title of host publication	Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages	311-317
Number of pages	7
Edition	3
DOIs	https://doi.org/10.1149/1.3569923
State	Published - 2011
Event	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada Duration: May 2 2011 → May 4 2011

Publication series

Name	ECS Transactions
Number	3
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	5/2/11 → 5/4/11

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.3569923

Cite this

Liu, L., Saripalli, V., Hwang, E., Narayanan, V., & Datta, S. (2011). Multi-gate modulation doped In_0.7Ga_0.3As quantum well FET for ultra low power digital logic. In Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 (3 ed., pp. 311-317). (ECS Transactions; Vol. 35, No. 3). https://doi.org/10.1149/1.3569923

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title = "Multi-gate modulation doped In0.7Ga0.3As quantum well FET for ultra low power digital logic",

abstract = "Multi-gate modulation doped In0.7Ga0.3As quantum well FETs (MuQFETs) are simulated, fabricated and analyzed in detail. The devices operate in both classical and non-classical quantum regime. Due to its robust electrostatics, its excellent channel transport properties and its versatile classical and quantum mode operation capability, In0.7Ga 0.3As MuQFET is promising device architecture for future ultra low power information processing applications.",

author = "L. Liu and V. Saripalli and E. Hwang and V. Narayanan and S. Datta",

year = "2011",

doi = "10.1149/1.3569923",

language = "English (US)",

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booktitle = "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3",

edition = "3",

note = "Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",

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Liu, L, Saripalli, V, Hwang, E, Narayanan, V & Datta, S 2011, Multi-gate modulation doped In_0.7Ga_0.3As quantum well FET for ultra low power digital logic. in Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 edn, ECS Transactions, no. 3, vol. 35, pp. 311-317, Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting, Montreal, QC, Canada, 5/2/11. https://doi.org/10.1149/1.3569923

Multi-gate modulation doped In_0.7Ga_0.3As quantum well FET for ultra low power digital logic. / Liu, L.; Saripalli, V.; Hwang, E. et al.
Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3. ed. 2011. p. 311-317 (ECS Transactions; Vol. 35, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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