Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert J. Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew M. Armstrong, Brianna A. Klein, Anushka Bansal, Disha Talreja, Alexej Pogrebnyakov, Eric Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

Original languageEnglish (US)
Article number153503
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 7 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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