Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh; Bikramjit Chatterjee; Yiwen Song; Albert G. Baca; Robert J. Kaplar; Thomas E. Beechem; Andrew A. Allerman; Andrew M. Armstrong; Brianna A. Klein; Anushka Bansal; Disha Talreja; Alexej Pogrebnyakov; Eric Heller; Venkatraman Gopalan; Joan M. Redwing; Brian M. Foley; Sukwon Choi

doi:10.1063/1.5115013

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert J. Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew M. Armstrong, Brianna A. Klein, Anushka Bansal, Disha Talreja, Alexej Pogrebnyakov, Eric Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (Al_xGa_1-xN). Multidimensional thermal characterization of an Al_0.30Ga_0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al_0.30Ga_0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al_xGa_1-xN may open the door for extreme temperature applications.

Original language	English (US)
Article number	153503
Journal	Applied Physics Letters
Volume	115
Issue number	15
DOIs	https://doi.org/10.1063/1.5115013
State	Published - Oct 7 2019

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.5115013

Cite this

Lundh, J. S., Chatterjee, B., Song, Y., Baca, A. G., Kaplar, R. J., Beechem, T. E., Allerman, A. A., Armstrong, A. M., Klein, B. A., Bansal, A., Talreja, D., Pogrebnyakov, A., Heller, E., Gopalan, V., Redwing, J. M., Foley, B. M., & Choi, S. (2019). Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. Applied Physics Letters, 115(15), Article 153503. https://doi.org/10.1063/1.5115013

@article{274fa9a2a5a2416e982a8a458fa5164c,

title = "Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor",

abstract = "Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.",

author = "Lundh, {James Spencer} and Bikramjit Chatterjee and Yiwen Song and Baca, {Albert G.} and Kaplar, {Robert J.} and Beechem, {Thomas E.} and Allerman, {Andrew A.} and Armstrong, {Andrew M.} and Klein, {Brianna A.} and Anushka Bansal and Disha Talreja and Alexej Pogrebnyakov and Eric Heller and Venkatraman Gopalan and Redwing, {Joan M.} and Foley, {Brian M.} and Sukwon Choi",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = oct,

day = "7",

doi = "10.1063/1.5115013",

language = "English (US)",

volume = "115",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

Lundh, JS, Chatterjee, B, Song, Y, Baca, AG, Kaplar, RJ, Beechem, TE, Allerman, AA, Armstrong, AM, Klein, BA, Bansal, A, Talreja, D, Pogrebnyakov, A, Heller, E, Gopalan, V , Redwing, JM , Foley, BM & Choi, S 2019, 'Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor', Applied Physics Letters, vol. 115, no. 15, 153503. https://doi.org/10.1063/1.5115013

TY - JOUR

T1 - Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

AU - Lundh, James Spencer

AU - Chatterjee, Bikramjit

AU - Song, Yiwen

AU - Baca, Albert G.

AU - Kaplar, Robert J.

AU - Beechem, Thomas E.

AU - Allerman, Andrew A.

AU - Armstrong, Andrew M.

AU - Klein, Brianna A.

AU - Bansal, Anushka

AU - Talreja, Disha

AU - Pogrebnyakov, Alexej

AU - Heller, Eric

AU - Gopalan, Venkatraman

AU - Redwing, Joan M.

AU - Foley, Brian M.

AU - Choi, Sukwon

PY - 2019/10/7

Y1 - 2019/10/7

N2 - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

AB - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

UR - http://www.scopus.com/inward/record.url?scp=85073353750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073353750&partnerID=8YFLogxK

U2 - 10.1063/1.5115013

DO - 10.1063/1.5115013

M3 - Article

AN - SCOPUS:85073353750

SN - 0003-6951

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153503

ER -

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this