Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh; Bikramjit Chatterjee; Yiwen Song; Albert G. Baca; Robert J. Kaplar; Thomas E. Beechem; Andrew A. Allerman; Andrew M. Armstrong; Brianna A. Klein; Anushka Bansal; Disha Talreja; Alexej Pogrebnyakov; Eric Heller; Venkatraman Gopalan; Joan M. Redwing; Brian M. Foley; Sukwon Choi

doi:10.1063/1.5115013

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh
, Bikramjit Chatterjee
, Yiwen Song
, Albert G. Baca
, Robert J. Kaplar
, Thomas E. Beechem
, Andrew A. Allerman
, Andrew M. Armstrong
, Brianna A. Klein
, Anushka Bansal
, Disha Talreja
, Alexej Pogrebnyakov
, Eric Heller
, Venkatraman Gopalan
, Joan M. Redwing
, Brian M. Foley
, Sukwon Choi

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (Al_xGa_1-xN). Multidimensional thermal characterization of an Al_0.30Ga_0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al_0.30Ga_0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al_xGa_1-xN may open the door for extreme temperature applications.

Original language	English (US)
Article number	153503
Journal	Applied Physics Letters
Volume	115
Issue number	15
DOIs	https://doi.org/10.1063/1.5115013
State	Published - Oct 7 2019

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5115013

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Lundh, J. S., Chatterjee, B., Song, Y., Baca, A. G., Kaplar, R. J., Beechem, T. E., Allerman, A. A., Armstrong, A. M., Klein, B. A., Bansal, A., Talreja, D., Pogrebnyakov, A., Heller, E., Gopalan, V., Redwing, J. M., Foley, B. M., & Choi, S. (2019). Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. Applied Physics Letters, 115(15), Article 153503. https://doi.org/10.1063/1.5115013

@article{274fa9a2a5a2416e982a8a458fa5164c,

title = "Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor",

abstract = "Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.",

author = "Lundh, \{James Spencer\} and Bikramjit Chatterjee and Yiwen Song and Baca, \{Albert G.\} and Kaplar, \{Robert J.\} and Beechem, \{Thomas E.\} and Allerman, \{Andrew A.\} and Armstrong, \{Andrew M.\} and Klein, \{Brianna A.\} and Anushka Bansal and Disha Talreja and Alexej Pogrebnyakov and Eric Heller and Venkatraman Gopalan and Redwing, \{Joan M.\} and Foley, \{Brian M.\} and Sukwon Choi",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = oct,

day = "7",

doi = "10.1063/1.5115013",

language = "English (US)",

volume = "115",

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Lundh, JS, Chatterjee, B, Song, Y, Baca, AG, Kaplar, RJ, Beechem, TE, Allerman, AA, Armstrong, AM, Klein, BA, Bansal, A, Talreja, D, Pogrebnyakov, A, Heller, E, Gopalan, V , Redwing, JM, Foley, BM & Choi, S 2019, 'Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor', Applied Physics Letters, vol. 115, no. 15, 153503. https://doi.org/10.1063/1.5115013

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T1 - Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

AU - Lundh, James Spencer

AU - Chatterjee, Bikramjit

AU - Song, Yiwen

AU - Baca, Albert G.

AU - Kaplar, Robert J.

AU - Beechem, Thomas E.

AU - Allerman, Andrew A.

AU - Armstrong, Andrew M.

AU - Klein, Brianna A.

AU - Bansal, Anushka

AU - Talreja, Disha

AU - Pogrebnyakov, Alexej

AU - Heller, Eric

AU - Gopalan, Venkatraman

AU - Redwing, Joan M.

AU - Foley, Brian M.

AU - Choi, Sukwon

PY - 2019/10/7

Y1 - 2019/10/7

N2 - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

AB - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153503

ER -

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

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