Multiferroic tunnel junctions

Yue Wei Yin; Muralikrishna Raju; Wei Jin Hu; Xiao Jun Weng; Ke Zou; Jun Zhu; Xiao Guang Li; Zhi Dong Zhang; Qi Li

doi:10.1007/s11467-012-0266-8

Multiferroic tunnel junctions

Yue Wei Yin, Muralikrishna Raju, Wei Jin Hu, Xiao Jun Weng, Ke Zou, Jun Zhu, Xiao Guang Li, Zhi Dong Zhang, Qi Li

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39 Scopus citations

Abstract

Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La _0.7Ca _0.3MnO ₃ and La _0.7Sr _0.3MnO ₃ as the electrodes and ferroelectric (Ba, Sr)TiO ₃ as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO ₃ films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.

Original language	English (US)
Pages (from-to)	380-385
Number of pages	6
Journal	Frontiers of Physics
Volume	7
Issue number	4
DOIs	https://doi.org/10.1007/s11467-012-0266-8
State	Published - Aug 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Multiferroic tunnel junctions",

abstract = "Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La 0.7Ca 0.3MnO 3 and La 0.7Sr 0.3MnO 3 as the electrodes and ferroelectric (Ba, Sr)TiO 3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO 3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.",

author = "Yin, {Yue Wei} and Muralikrishna Raju and Hu, {Wei Jin} and Weng, {Xiao Jun} and Ke Zou and Jun Zhu and Li, {Xiao Guang} and Zhang, {Zhi Dong} and Qi Li",

note = "Funding Information: Acknowledgements The work was supported in part by DOE DE-FG02-08ER4653 (QL), NSF DMR-1207474 (QL), Penn State MRSEC seed grant (QL), and NBRP-2012CB922003 (XL), and NSFC-50831006 (ZZ).",

year = "2012",

month = aug,

doi = "10.1007/s11467-012-0266-8",

language = "English (US)",

volume = "7",

pages = "380--385",

journal = "Frontiers of Physics",

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T1 - Multiferroic tunnel junctions

AU - Yin, Yue Wei

AU - Raju, Muralikrishna

AU - Hu, Wei Jin

AU - Weng, Xiao Jun

AU - Zou, Ke

AU - Zhu, Jun

AU - Li, Xiao Guang

AU - Zhang, Zhi Dong

AU - Li, Qi

N1 - Funding Information: Acknowledgements The work was supported in part by DOE DE-FG02-08ER4653 (QL), NSF DMR-1207474 (QL), Penn State MRSEC seed grant (QL), and NBRP-2012CB922003 (XL), and NSFC-50831006 (ZZ).

PY - 2012/8

Y1 - 2012/8

N2 - Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La 0.7Ca 0.3MnO 3 and La 0.7Sr 0.3MnO 3 as the electrodes and ferroelectric (Ba, Sr)TiO 3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO 3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.

AB - Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La 0.7Ca 0.3MnO 3 and La 0.7Sr 0.3MnO 3 as the electrodes and ferroelectric (Ba, Sr)TiO 3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO 3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.

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Multiferroic tunnel junctions

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