Multilevel resistive switching with ionic and metallic filaments

Ming Liu; Z. Abid; Wei Wang; Xiaoli He; Qi Liu; Weihua Guan

doi:10.1063/1.3151822

Multilevel resistive switching with ionic and metallic filaments

Ming Liu, Z. Abid, Wei Wang, Xiaoli He, Qi Liu, Weihua Guan

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

157 Scopus citations

Abstract

The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ ZrO2 / n+ -Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.

Original language	English (US)
Article number	233106
Journal	Applied Physics Letters
Volume	94
Issue number	23
DOIs	https://doi.org/10.1063/1.3151822
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3151822

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title = "Multilevel resistive switching with ionic and metallic filaments",

abstract = "The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ ZrO2 / n+ -Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.",

author = "Ming Liu and Z. Abid and Wei Wang and Xiaoli He and Qi Liu and Weihua Guan",

note = "Funding Information: This work is partially supported by NSF (Grant No. 0829824), SRC FRCP, NSFC (Grant No 60825403), and 973 project (Grant Nos. 2006CB302706, 2006CB806204).",

year = "2009",

doi = "10.1063/1.3151822",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Multilevel resistive switching with ionic and metallic filaments

AU - Liu, Ming

AU - Abid, Z.

AU - Wang, Wei

AU - He, Xiaoli

AU - Liu, Qi

AU - Guan, Weihua

N1 - Funding Information: This work is partially supported by NSF (Grant No. 0829824), SRC FRCP, NSFC (Grant No 60825403), and 973 project (Grant Nos. 2006CB302706, 2006CB806204).

PY - 2009

Y1 - 2009

N2 - The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ ZrO2 / n+ -Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.

AB - The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ ZrO2 / n+ -Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.

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ER -

Multilevel resistive switching with ionic and metallic filaments

Abstract

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