N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

Man Hoi Wong; Yi Pei; Rongming Chu; Siddharth Rajan; Brian L. Swenson; David F. Brown; Stacia Keller; Steven P. DenBaars; James S. Speck; Umesh K. Mishra

doi:10.1109/LED.2008.2003543

N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, Stacia Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (f_T) of 17 GHz and a power-gain cutoff frequency (f_max) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

Original language	English (US)
Pages (from-to)	1101-1104
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/LED.2008.2003543
State	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2003543

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@article{2ca7774ed4f0466abd4380ed06945a60,

title = "N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier",

abstract = "We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.",

author = "Wong, {Man Hoi} and Yi Pei and Rongming Chu and Siddharth Rajan and Swenson, {Brian L.} and Brown, {David F.} and Stacia Keller and DenBaars, {Steven P.} and Speck, {James S.} and Mishra, {Umesh K.}",

note = "Funding Information: Manuscript received June 20, 2008; revised July 28, 2008. Current version published September 24, 2008. This work was supported in part by the ONR MINE project (monitored by Dr. H. Dietrich and Dr. P. Maki) and in part by the DARPA CNID program. The review of this letter was arranged by Editor J. A. del Alamo.",

year = "2008",

doi = "10.1109/LED.2008.2003543",

language = "English (US)",

volume = "29",

pages = "1101--1104",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

AU - Wong, Man Hoi

AU - Pei, Yi

AU - Chu, Rongming

AU - Rajan, Siddharth

AU - Swenson, Brian L.

AU - Brown, David F.

AU - Keller, Stacia

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

N1 - Funding Information: Manuscript received June 20, 2008; revised July 28, 2008. Current version published September 24, 2008. This work was supported in part by the ONR MINE project (monitored by Dr. H. Dietrich and Dr. P. Maki) and in part by the DARPA CNID program. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2008

Y1 - 2008

N2 - We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

AB - We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

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