Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam; Saber Haji; Farshid Karbassian; Shams Mohajerzadeh; Aida Ebrahimi; Yaser Abdi; Michael D. Robertson

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam, Saber Haji, Farshid Karbassian, Shams Mohajerzadeh, Aida Ebrahimi, Yaser Abdi, Michael D. Robertson

School of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm ²/Vs.

Original language	English (US)
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages	441-446
Number of pages	6
State	Published - 2007
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 21 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	910
ISSN (Print)	0272-9172

Other

Other	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/18/06 → 4/21/06

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Behnam, A., Haji, S., Karbassian, F., Mohajerzadeh, S., Ebrahimi, A., Abdi, Y., & Robertson, M. D. (2007). Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 441-446). (Materials Research Society Symposium Proceedings; Vol. 910).

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title = "Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique",

abstract = "The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.",

author = "Ashkan Behnam and Saber Haji and Farshid Karbassian and Shams Mohajerzadeh and Aida Ebrahimi and Yaser Abdi and Robertson, {Michael D.}",

year = "2007",

language = "English (US)",

isbn = "1558998667",

series = "Materials Research Society Symposium Proceedings",

pages = "441--446",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 21-04-2006",

}

Behnam, A, Haji, S, Karbassian, F, Mohajerzadeh, S, Ebrahimi, A, Abdi, Y & Robertson, MD 2007, Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Materials Research Society Symposium Proceedings, vol. 910, pp. 441-446, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. / Behnam, Ashkan; Haji, Saber; Karbassian, Farshid et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. 2007. p. 441-446 (Materials Research Society Symposium Proceedings; Vol. 910).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

AU - Behnam, Ashkan

AU - Haji, Saber

AU - Karbassian, Farshid

AU - Mohajerzadeh, Shams

AU - Ebrahimi, Aida

AU - Abdi, Yaser

AU - Robertson, Michael D.

PY - 2007

Y1 - 2007

N2 - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

AB - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

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M3 - Conference contribution

AN - SCOPUS:34249934595

SN - 1558998667

SN - 9781558998667

T3 - Materials Research Society Symposium Proceedings

SP - 441

EP - 446

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 21 April 2006

ER -

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

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All Science Journal Classification (ASJC) codes

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