Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam; Saber Haji; Farshid Karbassian; Shams Mohajerzadeh; Aida Ebrahimi; Yaser Abdi; Michael D. Robertson

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Ashkan Behnam, Saber Haji, Farshid Karbassian, Shams Mohajerzadeh, Aida Ebrahimi, Yaser Abdi, Michael D. Robertson

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm ²/Vs.

Original language	English (US)
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages	441-446
Number of pages	6
State	Published - Jun 12 2007
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 21 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	910
ISSN (Print)	0272-9172

Other

Other	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/18/06 → 4/21/06

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Behnam, A., Haji, S., Karbassian, F., Mohajerzadeh, S., Ebrahimi, A., Abdi, Y., & Robertson, M. D. (2007). Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 441-446). (Materials Research Society Symposium Proceedings; Vol. 910).

@inproceedings{dc24ed721c5e4e7db1507a3452c6c3a3,

title = "Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique",

abstract = "The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.",

author = "Ashkan Behnam and Saber Haji and Farshid Karbassian and Shams Mohajerzadeh and Aida Ebrahimi and Yaser Abdi and Robertson, {Michael D.}",

year = "2007",

month = jun,

day = "12",

language = "English (US)",

isbn = "1558998667",

series = "Materials Research Society Symposium Proceedings",

pages = "441--446",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 21-04-2006",

}

Behnam, A, Haji, S, Karbassian, F, Mohajerzadeh, S, Ebrahimi, A, Abdi, Y & Robertson, MD 2007, Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Materials Research Society Symposium Proceedings, vol. 910, pp. 441-446, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. / Behnam, Ashkan; Haji, Saber; Karbassian, Farshid et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. 2007. p. 441-446 (Materials Research Society Symposium Proceedings; Vol. 910).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

AU - Behnam, Ashkan

AU - Haji, Saber

AU - Karbassian, Farshid

AU - Mohajerzadeh, Shams

AU - Ebrahimi, Aida

AU - Abdi, Yaser

AU - Robertson, Michael D.

PY - 2007/6/12

Y1 - 2007/6/12

N2 - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

AB - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.

UR - http://www.scopus.com/inward/record.url?scp=34249934595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249934595&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34249934595

SN - 1558998667

SN - 9781558998667

T3 - Materials Research Society Symposium Proceedings

SP - 441

EP - 446

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 21 April 2006

ER -

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this