TY - GEN
T1 - Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique
AU - Behnam, Ashkan
AU - Haji, Saber
AU - Karbassian, Farshid
AU - Mohajerzadeh, Shams
AU - Ebrahimi, Aida
AU - Abdi, Yaser
AU - Robertson, Michael D.
PY - 2007
Y1 - 2007
N2 - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.
AB - The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170°C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm 2/Vs.
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M3 - Conference contribution
AN - SCOPUS:34249934595
SN - 1558998667
SN - 9781558998667
T3 - Materials Research Society Symposium Proceedings
SP - 441
EP - 446
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
T2 - 2006 MRS Spring Meeting
Y2 - 18 April 2006 through 21 April 2006
ER -