Nanocavity generation in SiO2 by Kr and Xe ion implantation

H. Assaf; E. Ntsoenzok; E. Leoni; M. F. Barthe; M. O. Ruault; O. Kaitasov; S. Ashok

doi:10.1149/1.2757124

Nanocavity generation in SiO₂ by Kr and Xe ion implantation

H. Assaf, E. Ntsoenzok, E. Leoni, M. F. Barthe, M. O. Ruault, O. Kaitasov, S. Ashok

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7 Scopus citations

Abstract

Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.

Original language	English (US)
Pages (from-to)	G72-G75
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	10
DOIs	https://doi.org/10.1149/1.2757124
State	Published - 2007

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.",

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T1 - Nanocavity generation in SiO2 by Kr and Xe ion implantation

AU - Assaf, H.

AU - Ntsoenzok, E.

AU - Leoni, E.

AU - Barthe, M. F.

AU - Ruault, M. O.

AU - Kaitasov, O.

AU - Ashok, S.

PY - 2007

Y1 - 2007

N2 - Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.

AB - Implantation of heavy inert gas ions such as Kr and Xe are found to form nanometer-size bubbles/cavities in thermally grown silicon dioxide. Implantation energies were chosen to produce the same projected range Rp ∼125 nm for the two ions. The bubble/cavity distribution and size are found to be ion-mass-dependent. After thermal annealing the SiO2 layer implanted with Kr is bubble free while thermal growth of bubbles/cavities is observed for the sample implanted with Xe. These bubbles/cavities created in SiO2 are reflected by significant reduction in its dielectric constant, thus offering the prospect for an original way of generating low- k materials.

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JF - Electrochemical and Solid-State Letters

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ER -

Nanocavity generation in SiO₂ by Kr and Xe ion implantation

Abstract

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