TY - JOUR
T1 - Nanocomposite sol-gel route to low K ceramic substrates
AU - Komarneni, Sridhar
AU - Rani, Lalba
N1 - Funding Information:
This research was supported by the United States Air Force Office of Scientific Research under grant No. AFOSR-89-0446.
Funding Information:
Acknowledgement -- This research was supported by the United States Air Force Office of Scientific Research under grant No. AFOSR-89-0446.
Publisher Copyright:
© 1991 SPIE. All rights reserved.
PY - 1991
Y1 - 1991
N2 - Aluminosilicate gels of different alumina and silica ratios and cordierite, Mg2Al4Si5O18 gels were made by the nanocomposite sol-gel route and sintered to obtain highly dense materials. Measurements of the dielectric constant, K, and dissipation (loss) as a function of temperature and frequency showed that low dielectric constants of 5.6 and 5.4 at 1 and 4 MHz, respectively, for cordierite and of 6.9 and 6.7 at 1 and 4 MHz, respectively for mullite at 25°C were achieved. Aluminosilicate materials prepared with 10 wt% Al2O3 and 90 wt% SiO2 showed the lowest dielectric constants of 4.27 and 4.20 at 1 and 4 MHz, respectively.
AB - Aluminosilicate gels of different alumina and silica ratios and cordierite, Mg2Al4Si5O18 gels were made by the nanocomposite sol-gel route and sintered to obtain highly dense materials. Measurements of the dielectric constant, K, and dissipation (loss) as a function of temperature and frequency showed that low dielectric constants of 5.6 and 5.4 at 1 and 4 MHz, respectively, for cordierite and of 6.9 and 6.7 at 1 and 4 MHz, respectively for mullite at 25°C were achieved. Aluminosilicate materials prepared with 10 wt% Al2O3 and 90 wt% SiO2 showed the lowest dielectric constants of 4.27 and 4.20 at 1 and 4 MHz, respectively.
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U2 - 10.1117/12.636834
DO - 10.1117/12.636834
M3 - Conference article
AN - SCOPUS:85075632831
SN - 0277-786X
VL - 1622
SP - 147
EP - 150
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Emerging Optoelectronic Technologies 1991
Y2 - 16 December 1991
ER -