Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes

Haidong Lu, Bo Wang, Tao Li, Alexey Lipatov, Hyungwoo Lee, Anil Rajapitamahuni, Ruijuan Xu, Xia Hong, Saeedeh Farokhipoor, Lane W. Martin, Chang Beom Eom, Long Qing Chen, Alexander Sinitskii, Alexei Gruverman

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

Original languageEnglish (US)
Pages (from-to)6460-6466
Number of pages7
JournalNano letters
Issue number10
StatePublished - Oct 12 2016

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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