Abstract
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al1-xBxN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.
Original language | English (US) |
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Pages (from-to) | 16231-16238 |
Number of pages | 8 |
Journal | Nano letters |
Volume | 24 |
Issue number | 51 |
DOIs | |
State | Published - Dec 25 2024 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering