Nanoscale Ferroelectric Programming of van der Waals Heterostructures

Dengyu Yang, Qingrui Cao, Erin Akyuz, John Hayden, Josh Nordlander, Ian Mercer, Muqing Yu, Ranjani Ramachandran, Patrick Irvin, Jon Paul Maria, Benjamin M. Hunt, Jeremy Levy

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al1-xBxN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.

Original languageEnglish (US)
Pages (from-to)16231-16238
Number of pages8
JournalNano letters
Volume24
Issue number51
DOIs
StatePublished - Dec 25 2024

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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