Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High-Mobility Transistors

Keyphrases

• High Electron Mobility Transistor 100%
• Radiation Sensitivity 100%
• AlGaN Layer 100%
• Localization Effect 100%
• Tensile Stress 66%
• Transmission Electron Microscopy 33%
• Stress Dependence 33%
• Stress Field 33%
• Band Gap 33%
• Gamma Rays 33%
• Radiation Effects 33%
• Induced Strain 33%
• High-energy Electrons 33%
• Microelectronics 33%
• GaN HEMT 33%
• Global Averaging 33%
• Spatially Resolved 33%
• Nucleation Site 33%
• Carrier Concentration 33%
• Gamma Irradiation 33%
• High Radiation 33%
• Carrier Mobility 33%
• Geometric Phase Analysis 33%
• Mechanical Stress Field 33%
• Defect nucleation 33%
• Processing Aspects 33%

Engineering

• Nanoscale 100%
• Stress Field 100%
• Nitride 50%
• Energy Electron 50%
• Tensile Stress σ 50%
• Mechanical Stress 50%
• Microelectronics 50%
• Tensiles 50%
• Phase Analysis 50%
• Radiation Effect 50%
• Nucleation Site 50%
• Stress Dependence 50%
• High Tensile Stress 50%
• Gamma Radiation 50%

Material Science

• Transistor 100%
• Ultimate Tensile Strength 100%
• Stress Field 100%
• Electron Diffraction 50%
• Transmission Electron Microscopy 50%
• Gallium Nitride 50%
• Nucleation 50%
• Carrier Concentration 50%
• Electron Mobility 50%
• Radiation Damage 50%
• Mechanical Stress 50%
• Carrier Mobility 50%