TY - JOUR
T1 - Nanostructured multilayer metal/por-Si structures based on CoSi2 film
T2 - Optical and electronic properties
AU - Belousov, Igor
AU - Pchelyakov, Oleg
AU - Romanov, Sergey
AU - Kovtyukhova, Nina
AU - Putselyk, Sergiy
AU - Yakovkin, Konstantin
AU - Zherebetskiy, Danila
AU - Gorchinskiy, Alexsander
AU - Popova, Galina
AU - Buzaneva, Eugenia
N1 - Funding Information:
This work was partly supported by INCO COPERNICUS SBLED Project 977037 and Greece-Ukrainian Grant “Nanostructured films based on oxides, intermetallides and polymers on silicon surface for chemical sensors”.
PY - 2002/1/2
Y1 - 2002/1/2
N2 - To create nanostructured multilayer Co/por-Si structures based on CoSi2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi2 nanocrystals, intermediated layer (130-150 nm) contained 3-11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV - VIS spectroscopies. The formed por-CoSi2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648-1275 cm-1) and maximal reflectance (2000-3200 cm11); the maximal reflectance (up to 80%) at 800-900 nm, the optical bandgap of Si nanocrystals is Eg = 1.2-2.6 eV, and the height of the barrier of CoSi2/nano-Si structures is 0.7-0.95 eV.
AB - To create nanostructured multilayer Co/por-Si structures based on CoSi2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi2 nanocrystals, intermediated layer (130-150 nm) contained 3-11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV - VIS spectroscopies. The formed por-CoSi2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648-1275 cm-1) and maximal reflectance (2000-3200 cm11); the maximal reflectance (up to 80%) at 800-900 nm, the optical bandgap of Si nanocrystals is Eg = 1.2-2.6 eV, and the height of the barrier of CoSi2/nano-Si structures is 0.7-0.95 eV.
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U2 - 10.1016/S0928-4931(01)00485-4
DO - 10.1016/S0928-4931(01)00485-4
M3 - Article
AN - SCOPUS:0037005863
SN - 0928-4931
VL - 19
SP - 247
EP - 249
JO - Materials Science and Engineering C
JF - Materials Science and Engineering C
IS - 1-2
ER -