TY - GEN
T1 - Nanotextured solar cells using aluminum as a catalyst and dopant
AU - Hainey, Mel
AU - Chen, Chen
AU - Brigeman, Alyssa
AU - Geibink, Noel
AU - Black, Marcie R.
AU - Redwing, Joan M.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - A black silicon solar cell fabricated using aluminum as both a catalyst and dopant is demonstrated. A nanowire/nanopyramid black silicon surface texture is grown via aluminum (Al)-catalyzed vapor-liquid-solid growth, and post-growth annealing diffuses the aluminum into the n-type substrate, forming a p-n junction. Devices with nanopyramid surface textures are found to have higher short-circuit currents and open-circuit voltages than nanowire surface textures grown at lower temperatures, and post-growth annealing times of 15-30 minutes are found to promote higher short-circuit current densities. External quantum efficiency measurements show that the highest photoconversion occurs in the red and IR regions for all devices, with low quantum efficiencies at shorter wavelengths even when the p-type silicon surface is passivated with alumina. The quantum efficiency spectra imply that the devices are limited by recombination on the illuminated side of the device. Based on these results and previous data on Al-catalyzed wires and pyramids, excess Al incorporation and Al cluster formation in the emitter are suggested as the primary factors currently limiting device performance.
AB - A black silicon solar cell fabricated using aluminum as both a catalyst and dopant is demonstrated. A nanowire/nanopyramid black silicon surface texture is grown via aluminum (Al)-catalyzed vapor-liquid-solid growth, and post-growth annealing diffuses the aluminum into the n-type substrate, forming a p-n junction. Devices with nanopyramid surface textures are found to have higher short-circuit currents and open-circuit voltages than nanowire surface textures grown at lower temperatures, and post-growth annealing times of 15-30 minutes are found to promote higher short-circuit current densities. External quantum efficiency measurements show that the highest photoconversion occurs in the red and IR regions for all devices, with low quantum efficiencies at shorter wavelengths even when the p-type silicon surface is passivated with alumina. The quantum efficiency spectra imply that the devices are limited by recombination on the illuminated side of the device. Based on these results and previous data on Al-catalyzed wires and pyramids, excess Al incorporation and Al cluster formation in the emitter are suggested as the primary factors currently limiting device performance.
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U2 - 10.1109/PVSC.2016.7750186
DO - 10.1109/PVSC.2016.7750186
M3 - Conference contribution
AN - SCOPUS:85003520600
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2896
EP - 2899
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -