Nanotube devices: A microscopic model

K. A. Bulashevich, S. V. Rotkin

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.

Original languageEnglish (US)
Pages (from-to)205-209
Number of pages5
JournalJETP Letters
Issue number4
StatePublished - Feb 25 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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