The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).
|Original language||English (US)|
|Journal||IEEE Transactions on Nuclear Science|
|State||Published - Dec 1987|
All Science Journal Classification (ASJC) codes
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering