NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

Howard S. Witham; Patrick M. Lenahan

NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

Research output: Contribution to journal › Article › peer-review

Abstract

The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

Original language	English (US)
Journal	IEEE Transactions on Nuclear Science
Volume	NS-34
Issue number	6
State	Published - Dec 1987

All Science Journal Classification (ASJC) codes

Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

@article{8fab70396f41446fbfeb3f3173d48262,

title = "NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.",

abstract = "The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).",

author = "Witham, {Howard S.} and Lenahan, {Patrick M.}",

year = "1987",

month = dec,

language = "English (US)",

volume = "NS-34",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

AU - Witham, Howard S.

AU - Lenahan, Patrick M.

PY - 1987/12

Y1 - 1987/12

N2 - The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

AB - The authors investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiation, electron spin resonance measurements, and capacitance-versus-voltage measurements, results were obtained that are consistent with a simple oxygen vacancy model for the hole trap. However, these results are inconsistent with the bond strain gradient model proposed by F. J. Grunthaner et al. (1982).

UR - http://www.scopus.com/inward/record.url?scp=0023589972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023589972&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023589972

SN - 0018-9499

VL - NS-34

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

NATURE OF THE DEEP HOLE TRAP IN MOS OXIDES.

Abstract

All Science Journal Classification (ASJC) codes

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