Nature of the dominant deep trap in amorphous silicon nitride

D. T. Krick, P. M. Lenahan, J. Kanicki

Research output: Contribution to journalArticlepeer-review

90 Scopus citations


We observe a strong correlation between changes in the density of paramagnetic silicon-dangling-bond centers and changes in the space-charge density in amorphous silicon nitride films subjected alternately to positive and negative charge injection and optical illumination. Our results provide, for the first time, direct experimental evidence associating a specific point defect with the trapping phenomena in amorphous silicon nitride. We also demonstrate both directly and for the first time the amphoteric nature of the silicon nitride silicon-dangling-bond center.

Original languageEnglish (US)
Pages (from-to)8226-8229
Number of pages4
JournalPhysical Review B
Issue number12
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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