NBTI: An atomic-scale defect perspective

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

63 Scopus citations


We utilize a combination of MOSFET- gate controlled diode DC-IV measurements and a very sensitive electrically-detected electron spin resonance technique called spindependent recombination to observe and identify defect centers generated during NBTI in fully processed SiO2 and plasma nttrided oxide (PNO)-based pMOSFETs. In SIO2 devices, we observe the NBTI-induced generation of two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and very likely an oxide silicon dangling bond center (E'). Our observations indicate that both P b0 and Pb1 defects play major roles in these SiO 2-based devices and also suggest that E' centers could play an important role. In PNO devices, we observed the NBTI-induced generation of a new defect center which is fundamentally different from the Pb0P b1 defects generated durine NBTI in SiO2 devices. Our results indicate that it plays a dominating role in NBTI-induced interface state generation in thin PNO devices and also exhibits a post-negative bias temperature stress (NBTS) recovery. Although we observe different interface state defects, we observed essentially equivalent activation energies in both the SiO2 and PNO devices.

Original languageEnglish (US)
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Number of pages6
StatePublished - 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: Mar 26 2006Mar 30 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/TerritoryUnited States
CitySan Jose, CA

All Science Journal Classification (ASJC) codes

  • General Engineering


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