NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance

Sumeet Kumar Gupta; Georgios Panagopoulos; Kaushik Roy

doi:10.1109/TED.2012.2209182

NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance

Sumeet Kumar Gupta, Georgios Panagopoulos, Kaushik Roy

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We identify the possibility of negative-bias temperature instability (NBTI) in n-type silicon-on-insulator (SOI) FinFETs used as access transistors in SRAMs. We discuss that in the hold state of the SRAM cell, one of the access transistors may operate in the accumulation region and experience NBTI degradation. We compare NBTI in p- and n-type SOI FinFETs and show that NBTI in n-FinFETs affects only a part of the channel due to the presence of n ⁺ source/drain regions. Worst case analysis of the joint effect of NBTI in access and pull-up FinFETs on cell stability and performance of 6T SRAMs is carried out and compared with the conventional approach of considering NBTI in pull-up FinFETs only.

Original language	English (US)
Article number	6269071
Pages (from-to)	2603-2609
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	10
DOIs	https://doi.org/10.1109/TED.2012.2209182
State	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2209182

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title = "NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance",

abstract = "We identify the possibility of negative-bias temperature instability (NBTI) in n-type silicon-on-insulator (SOI) FinFETs used as access transistors in SRAMs. We discuss that in the hold state of the SRAM cell, one of the access transistors may operate in the accumulation region and experience NBTI degradation. We compare NBTI in p- and n-type SOI FinFETs and show that NBTI in n-FinFETs affects only a part of the channel due to the presence of n + source/drain regions. Worst case analysis of the joint effect of NBTI in access and pull-up FinFETs on cell stability and performance of 6T SRAMs is carried out and compared with the conventional approach of considering NBTI in pull-up FinFETs only.",

author = "Gupta, {Sumeet Kumar} and Georgios Panagopoulos and Kaushik Roy",

note = "Funding Information: Manuscript received March 22, 2012; revised May 16, 2012, June 9, 2012, and June 26, 2012; accepted June 28, 2012. Date of publication August 15, 2012; date of current version September 18, 2012. This work was supported in part by the National Science Foundation and in part by Intel Ph.D. Fellowship. The review of this paper was arranged by Editor B. Kaczer.",

year = "2012",

doi = "10.1109/TED.2012.2209182",

language = "English (US)",

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T1 - NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance

AU - Gupta, Sumeet Kumar

AU - Panagopoulos, Georgios

AU - Roy, Kaushik

N1 - Funding Information: Manuscript received March 22, 2012; revised May 16, 2012, June 9, 2012, and June 26, 2012; accepted June 28, 2012. Date of publication August 15, 2012; date of current version September 18, 2012. This work was supported in part by the National Science Foundation and in part by Intel Ph.D. Fellowship. The review of this paper was arranged by Editor B. Kaczer.

PY - 2012

Y1 - 2012

N2 - We identify the possibility of negative-bias temperature instability (NBTI) in n-type silicon-on-insulator (SOI) FinFETs used as access transistors in SRAMs. We discuss that in the hold state of the SRAM cell, one of the access transistors may operate in the accumulation region and experience NBTI degradation. We compare NBTI in p- and n-type SOI FinFETs and show that NBTI in n-FinFETs affects only a part of the channel due to the presence of n + source/drain regions. Worst case analysis of the joint effect of NBTI in access and pull-up FinFETs on cell stability and performance of 6T SRAMs is carried out and compared with the conventional approach of considering NBTI in pull-up FinFETs only.

AB - We identify the possibility of negative-bias temperature instability (NBTI) in n-type silicon-on-insulator (SOI) FinFETs used as access transistors in SRAMs. We discuss that in the hold state of the SRAM cell, one of the access transistors may operate in the accumulation region and experience NBTI degradation. We compare NBTI in p- and n-type SOI FinFETs and show that NBTI in n-FinFETs affects only a part of the channel due to the presence of n + source/drain regions. Worst case analysis of the joint effect of NBTI in access and pull-up FinFETs on cell stability and performance of 6T SRAMs is carried out and compared with the conventional approach of considering NBTI in pull-up FinFETs only.

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ER -

NBTI in n-type SOI access FinFETs in SRAMs and its impact on cell stability and performance

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