Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy

Jonathan R. Felts; Stephanie Law; Christopher M. Roberts; Viktor Podolskiy; Daniel M. Wasserman; William P. King

doi:10.1063/1.4802211

Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy

Jonathan R. Felts, Stephanie Law, Christopher M. Roberts, Viktor Podolskiy, Daniel M. Wasserman, William P. King

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.

Original language	English (US)
Article number	152110
Journal	Applied Physics Letters
Volume	102
Issue number	15
DOIs	https://doi.org/10.1063/1.4802211
State	Published - Apr 15 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4802211

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title = "Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy",

abstract = "We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.",

author = "Felts, {Jonathan R.} and Stephanie Law and Roberts, {Christopher M.} and Viktor Podolskiy and Wasserman, {Daniel M.} and King, {William P.}",

note = "Funding Information: We gratefully acknowledge AFOSR FA9550-12-1-0089, FA9550-08-1-0407, NSF DMR-1210398, and DMR-1209761. This research was supported in part by the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No. DE-AC05-06OR23100.",

year = "2013",

month = apr,

day = "15",

doi = "10.1063/1.4802211",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy

AU - Felts, Jonathan R.

AU - Law, Stephanie

AU - Roberts, Christopher M.

AU - Podolskiy, Viktor

AU - Wasserman, Daniel M.

AU - King, William P.

N1 - Funding Information: We gratefully acknowledge AFOSR FA9550-12-1-0089, FA9550-08-1-0407, NSF DMR-1210398, and DMR-1209761. This research was supported in part by the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No. DE-AC05-06OR23100.

PY - 2013/4/15

Y1 - 2013/4/15

N2 - We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.

AB - We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 μm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures.

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U2 - 10.1063/1.4802211

DO - 10.1063/1.4802211

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VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152110

ER -

Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy

Abstract

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