Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals

Wenzhong Wang; Keda Wang; Daxing Han; Bed Poudel; Xiaowei Wang; D. Z. Wang; Baoqing Zeng; Z. F. Ren

doi:10.1088/0957-4484/18/7/075707

Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals

Wenzhong Wang, Keda Wang, Daxing Han, Bed Poudel, Xiaowei Wang, D. Z. Wang, Baoqing Zeng, Z. F. Ren

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 μm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (I_PL) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the I_PL is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO₂ layer and the bulk crystal Ge is responsible for the near-infrared PL.

Original language	English (US)
Article number	075707
Journal	Nanotechnology
Volume	18
Issue number	7
DOIs	https://doi.org/10.1088/0957-4484/18/7/075707
State	Published - Feb 21 2007

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/18/7/075707

Cite this

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title = "Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals",

abstract = "We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 μm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (IPL) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the IPL is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO2 layer and the bulk crystal Ge is responsible for the near-infrared PL.",

author = "Wenzhong Wang and Keda Wang and Daxing Han and Bed Poudel and Xiaowei Wang and Wang, {D. Z.} and Baoqing Zeng and Ren, {Z. F.}",

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T1 - Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals

AU - Wang, Wenzhong

AU - Wang, Keda

AU - Han, Daxing

AU - Poudel, Bed

AU - Wang, Xiaowei

AU - Wang, D. Z.

AU - Zeng, Baoqing

AU - Ren, Z. F.

PY - 2007/2/21

Y1 - 2007/2/21

N2 - We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 μm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (IPL) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the IPL is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO2 layer and the bulk crystal Ge is responsible for the near-infrared PL.

AB - We have studied the near-infrared photoluminescence properties of free-standing germanium nano-crystals (20 nm on average) and micro-crystals (60 μm on average) at 80-300 K. Two peaks were observed at ∼1.0 and ∼1.4 eV from both the nano- and micro-crystals. The integrated PL (IPL) intensity of the nano-crystals is about an order of magnitude stronger than that of the micro-crystals and the IPL is also enhanced by ageing in air for both crystals. The ∼1.0 eV peak position does not change with either the crystal size or temperature. We suggest that the deep traps located at the interfacial region between the surface GeO2 layer and the bulk crystal Ge is responsible for the near-infrared PL.

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JF - Nanotechnology

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Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals

Abstract

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