Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Wenjia Hu; Ron Henderson; Yu Zhang; Guanjun You; Lai Wei; Yangbo Bai; Jingkang Wang; Jian Xu

doi:10.1088/0957-4484/23/37/375202

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Wenjia Hu, Ron Henderson, Yu Zhang, Guanjun You, Lai Wei, Yangbo Bai, Jingkang Wang, Jian Xu

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

Original language	English (US)
Article number	375202
Journal	Nanotechnology
Volume	23
Issue number	37
DOIs	https://doi.org/10.1088/0957-4484/23/37/375202
State	Published - Sep 21 2012

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{4f78df5367ff4e2d990dee5f40db953b,

title = "Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture",

abstract = "PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.",

author = "Wenjia Hu and Ron Henderson and Yu Zhang and Guanjun You and Lai Wei and Yangbo Bai and Jingkang Wang and Jian Xu",

year = "2012",

month = sep,

day = "21",

doi = "10.1088/0957-4484/23/37/375202",

language = "English (US)",

volume = "23",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "37",

}

TY - JOUR

T1 - Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

AU - Hu, Wenjia

AU - Henderson, Ron

AU - Zhang, Yu

AU - You, Guanjun

AU - Wei, Lai

AU - Bai, Yangbo

AU - Wang, Jingkang

AU - Xu, Jian

PY - 2012/9/21

Y1 - 2012/9/21

N2 - PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

AB - PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

UR - http://www.scopus.com/inward/record.url?scp=84865431204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865431204&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/23/37/375202

DO - 10.1088/0957-4484/23/37/375202

M3 - Article

C2 - 22922394

AN - SCOPUS:84865431204

SN - 0957-4484

VL - 23

JO - Nanotechnology

JF - Nanotechnology

IS - 37

M1 - 375202

ER -

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

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