Near infrared radiation induced attenuation in P-doped and Al-doped optical fibers at cryogenic temperature

S. Zilberman, W. Lo, K. N. Herrera Guzman, Z. van Horn, R. Dror, A. Bruner, F. Scurti

Research output: Contribution to journalArticlepeer-review

Abstract

This manuscript presents a study on the effects of cryogenic irradiation on P-doped and Al-doped optical fibers, focusing on radiation-induced attenuation (RIA) when exposed to gamma radiation in the near-infrared (NIR) telecom wavelength 1550 nm. Results are compared to those obtained at room temperature under equivalent conditions. A novel P-doped fiber from the Israeli Institute for Advanced Photonics (ICAP) was tested for what we believe is the first time, along with commercially available P-and Al-doped optical fibers. All results are explained in terms of the defects that are associated with specific spectral ranges of each fiber chemistry. Results from the P-doped fiber show no recovery at room temperature and slight opposite recovery at cryogenic temperatures. The Al-doped fiber showed a slight recovery at both room and cryogenic temperatures. A kinetic model was used to extrapolate data up to higher doses, revealing higher RIA at cryogenic temperatures for both fiber types, with P-doped fiber exhibiting a 100% increase in expected saturation dose at cryogenic temperatures. By reporting the first experimental measurements of cryogenic RIA in P-doped and Al-doped fibers, this study sheds light on the underlying defects responsible for RIA at cryogenic temperature and represents an initial step toward developing in-situ cryogenic radiation dosimeters for nuclear fusion reactors, particle colliders, and space missions.

Original languageEnglish (US)
Article number#565581
Pages (from-to)1411-1425
Number of pages15
JournalOptics Continuum
Volume4
Issue number7
DOIs
StatePublished - Jul 15 2025

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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