Near sputter-threshold GaSb nanopatterning

Osman El-Atwani, Sean Gonderman, Jean Paul Allain

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e.g., <1017 cm-2) and up to nanostructure saturation (e.g., ∼1018 cm-2). Low-energy irradiation is conducted for energies between 15-100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb is found to delay nanostructure formation and this is predominant at energies below 100 eV. In-situ quartz crystal microbalance measurements collect sputtered particles yielding the sputter rate at threshold energies indicating a correlation between erosion and surface composition consistent with recent theoretical models. Ion-induced segregation is also found and indicated by both compositional measurements of both the surface and the sputtered plume.

Original languageEnglish (US)
Article number104308
JournalJournal of Applied Physics
Issue number10
StatePublished - Sep 14 2013

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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