TY - JOUR
T1 - Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy
AU - Gonzalez, C. E.
AU - Sharma, S. C.
AU - Hozhabri, N.
AU - Chi, D. Z.
AU - Ashok, S.
PY - 1999/6
Y1 - 1999/6
N2 - Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500°C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5 × 1017 cm-3.
AB - Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500°C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5 × 1017 cm-3.
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U2 - 10.1007/s003390050954
DO - 10.1007/s003390050954
M3 - Article
AN - SCOPUS:0032628248
SN - 0947-8396
VL - 68
SP - 643
EP - 645
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 6
ER -