Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Keyphrases

• Hydrogen Plasma 100%
• Plasma Treatment 100%
• Boron-doped Silicon 100%
• Wafer 66%
• Annealing 33%
• Atomic Hydrogen 33%
• Cm(III) 33%
• Vacancy Defects 33%
• Positron 33%
• Boron Doping 33%
• Doppler Spectrum 33%
• Damaged Layer 33%
• Electron Cyclotron Resonance Plasma 33%
• Si Wafer 33%
• Si-doped 33%
• Defect Density 33%
• Surface Vacancy 33%
• Implantation Depth 33%

Physics

• Hydrogen Plasma 100%
• Positron 100%
• Surface Defect 100%
• Electron Cyclotron Resonance 25%
• In-Beam Spectroscopy 25%

Material Science

• Boron 100%
• Silicon 100%
• Surface Defect 100%
• Defect Density 50%