Near zero-field magnetoresistance and defects in gallium nitride pn junctions

M. J. Elko; D. T. Hassenmayer; A. A. Higgins; P. M. Lenahan; M. E. Flatté; D. Fehr; M. D. Craven; T. D. Larsen

doi:10.1116/6.0003855

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

M. J. Elko
, D. T. Hassenmayer
, A. A. Higgins
, P. M. Lenahan
, M. E. Flatté
, D. Fehr
, M. D. Craven
, T. D. Larsen

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

Abstract

As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.

Original language	English (US)
Article number	052205
Journal	Journal of Vacuum Science and Technology B
Volume	42
Issue number	5
DOIs	https://doi.org/10.1116/6.0003855
State	Published - Sep 1 2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/6.0003855

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@article{1cfbba25153a4471aa5cdd8c8a198b9d,

title = "Near zero-field magnetoresistance and defects in gallium nitride pn junctions",

abstract = "As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.",

author = "Elko, \{M. J.\} and Hassenmayer, \{D. T.\} and Higgins, \{A. A.\} and Lenahan, \{P. M.\} and Flatt{\'e}, \{M. E.\} and D. Fehr and Craven, \{M. D.\} and Larsen, \{T. D.\}",

note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",

year = "2024",

month = sep,

day = "1",

doi = "10.1116/6.0003855",

language = "English (US)",

volume = "42",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Near zero-field magnetoresistance and defects in gallium nitride pn junctions

AU - Elko, M. J.

AU - Hassenmayer, D. T.

AU - Higgins, A. A.

AU - Lenahan, P. M.

AU - Flatté, M. E.

AU - Fehr, D.

AU - Craven, M. D.

AU - Larsen, T. D.

PY - 2024/9/1

Y1 - 2024/9/1

N2 - As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.

AB - As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.

UR - https://www.scopus.com/pages/publications/85201776632

UR - https://www.scopus.com/pages/publications/85201776632#tab=citedBy

U2 - 10.1116/6.0003855

DO - 10.1116/6.0003855

M3 - Article

AN - SCOPUS:85201776632

SN - 2166-2746

VL - 42

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 5

M1 - 052205

ER -

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

Abstract

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