Nearly isotropic etching of 6H-SiC in NF3 and O2 using a remote plasma

B. P. Luther, J. Ruzyllo, D. L. Miller

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Nearly isotropic etching of the 6H-SiC carbon face has been achieved in a remote plasma at 330°C using a mixture of O2 and NF3 in argon. Using evaporated aluminum as a mask, undercutting has been observed to a distance equal to the etch depth. The etch rate is a function of the ratio of O2 to NF3 flow rates and of temperature, peaking strongly to 220 nm/min at 82% oxygen for 330°C. Smooth surfaces were obtained for gas ratios leading to the maximum etch rate, and also for a NF3-argon mixture, with significant roughening observed for other O2-NF 3-argon mixtures. In the absence of a practical wet etch for SiC, this procedure is promising for isotropic etching in SiC device processing.

Original languageEnglish (US)
Pages (from-to)171-173
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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