Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

C. J. Cochrane; P. M. Lenahan; J. P. Campbell; G. Bersuker; A. Neugroschel

doi:10.1109/IRWS.2006.305201

Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

C. J. Cochrane, P. M. Lenahan, J. P. Campbell, G. Bersuker, A. Neugroschel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO₂ pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO₂ based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO₂ based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO₂ based devices, NBTI defects are located in the interfacial SiO₂ layer.

Original language	English (US)
Title of host publication	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Pages	11-15
Number of pages	5
DOIs	https://doi.org/10.1109/IRWS.2006.305201
State	Published - 2006
Event	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States Duration: Oct 16 2006 → Oct 19 2006

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Other

Other	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Country/Territory	United States
City	South Lake Tahoe, CA
Period	10/16/06 → 10/19/06

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/IRWS.2006.305201

Cite this

Cochrane, C. J., Lenahan, P. M., Campbell, J. P., Bersuker, G., & Neugroschel, A. (2006). Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 11-15). Article 4098678 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2006.305201

@inproceedings{2a3024bb221448de9cbca2353fefeccb,

title = "Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination",

abstract = "We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO2 based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO2 based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO2 based devices, NBTI defects are located in the interfacial SiO2 layer.",

author = "Cochrane, {C. J.} and Lenahan, {P. M.} and Campbell, {J. P.} and G. Bersuker and A. Neugroschel",

year = "2006",

doi = "10.1109/IRWS.2006.305201",

language = "English (US)",

isbn = "1424402964",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "11--15",

booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

}

Cochrane, CJ, Lenahan, PM, Campbell, JP, Bersuker, G & Neugroschel, A 2006, Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. in 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098678, IEEE International Integrated Reliability Workshop Final Report, pp. 11-15, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, United States, 10/16/06. https://doi.org/10.1109/IRWS.2006.305201

Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. / Cochrane, C. J.; Lenahan, P. M.; Campbell, J. P. et al.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. 2006. p. 11-15 4098678 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

AU - Cochrane, C. J.

AU - Lenahan, P. M.

AU - Campbell, J. P.

AU - Bersuker, G.

AU - Neugroschel, A.

PY - 2006

Y1 - 2006

N2 - We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO2 based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO2 based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO2 based devices, NBTI defects are located in the interfacial SiO2 layer.

AB - We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO2 based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO2 based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO2 based devices, NBTI defects are located in the interfacial SiO2 layer.

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Cochrane CJ, Lenahan PM, Campbell JP, Bersuker G, Neugroschel A. Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. 2006. p. 11-15. 4098678. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305201

Negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

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