TY - GEN
T1 - Negative capacitance transients in metal-ferroelectric Hf0.5Zr0.5O2-Insulator-Semiconductor (MFIS) capacitors
AU - Sharma, P.
AU - Zhang, J.
AU - Saha, A. K.
AU - Gupta, S.
AU - Datta, S.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have reported the direct observation of NC transients in Metal-FE-Metal (MFM) capacitors using epitaxial and polycrystalline ferroelectrics that are directly grown on metal electrodes [2][3][4]. For transistor application, however, FE directly grown on silicon channel with an interfacial oxide layer, such as the Metal-FE-Insulator-Semiconductor (MFIS), represent a more practica] configuration. In this paper, we report on the observation of negative capacitance transient for the first time in the Hafnium Zirconium oxide MFIS capacitor connected in series with a load resistor. We perform systematic experiments to study the influence of series resistance, applied AC voltage amplitude and the role of partial dipole switching on the NC effect.
AB - The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have reported the direct observation of NC transients in Metal-FE-Metal (MFM) capacitors using epitaxial and polycrystalline ferroelectrics that are directly grown on metal electrodes [2][3][4]. For transistor application, however, FE directly grown on silicon channel with an interfacial oxide layer, such as the Metal-FE-Insulator-Semiconductor (MFIS), represent a more practica] configuration. In this paper, we report on the observation of negative capacitance transient for the first time in the Hafnium Zirconium oxide MFIS capacitor connected in series with a load resistor. We perform systematic experiments to study the influence of series resistance, applied AC voltage amplitude and the role of partial dipole switching on the NC effect.
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U2 - 10.1109/DRC.2017.7999477
DO - 10.1109/DRC.2017.7999477
M3 - Conference contribution
AN - SCOPUS:85028061867
T3 - Device Research Conference - Conference Digest, DRC
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th Annual Device Research Conference, DRC 2017
Y2 - 25 June 2017 through 28 June 2017
ER -