Negative capacitance transients in metal-ferroelectric Hf0.5Zr0.5O2-Insulator-Semiconductor (MFIS) capacitors

P. Sharma, J. Zhang, A. K. Saha, S. Gupta, S. Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Scopus citations


    The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have reported the direct observation of NC transients in Metal-FE-Metal (MFM) capacitors using epitaxial and polycrystalline ferroelectrics that are directly grown on metal electrodes [2][3][4]. For transistor application, however, FE directly grown on silicon channel with an interfacial oxide layer, such as the Metal-FE-Insulator-Semiconductor (MFIS), represent a more practica] configuration. In this paper, we report on the observation of negative capacitance transient for the first time in the Hafnium Zirconium oxide MFIS capacitor connected in series with a load resistor. We perform systematic experiments to study the influence of series resistance, applied AC voltage amplitude and the role of partial dipole switching on the NC effect.

    Original languageEnglish (US)
    Title of host publication75th Annual Device Research Conference, DRC 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509063277
    StatePublished - Aug 1 2017
    Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
    Duration: Jun 25 2017Jun 28 2017

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770


    Other75th Annual Device Research Conference, DRC 2017
    Country/TerritoryUnited States
    CitySouth Bend

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering


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