TY - JOUR
T1 - Neutron-induced soft error rate measurements in semiconductor memories
AU - Ünlü, Kenan
AU - Narayanan, Vijaykrishnan
AU - Çetiner, Sacit M.
AU - Degalahal, Vijay
AU - Irwin, Mary J.
N1 - Funding Information:
This project is partially funded by NSF, Computer and Information Science and Engineering, Computer Research Infrastructure Grants (CISE/CRI); DOE Innovations in Nuclear Infrastructure and Education Grant (INIE); and Big-10 Minigrant Program.
PY - 2007/8/21
Y1 - 2007/8/21
N2 - Soft error rate (SER) testing of devices have been performed using the neutron beam at the Radiation Science and Engineering Center at Penn State University. The soft error susceptibility for different memory chips working at different technology nodes and operating voltages is determined. The effect of 10B on SER as an in situ excess charge source is observed. The effect of higher-energy neutrons on circuit operation will be published later. Penn State Breazeale Nuclear Reactor was used as the neutron source in the experiments. The high neutron flux allows for accelerated testing of the SER phenomenon. The experiments and analyses have been performed only on soft errors due to thermal neutrons. Various memory chips manufactured by different vendors were tested at various supply voltages and reactor power levels. The effect of 10B reaction caused by thermal neutron absorption on SER is discussed.
AB - Soft error rate (SER) testing of devices have been performed using the neutron beam at the Radiation Science and Engineering Center at Penn State University. The soft error susceptibility for different memory chips working at different technology nodes and operating voltages is determined. The effect of 10B on SER as an in situ excess charge source is observed. The effect of higher-energy neutrons on circuit operation will be published later. Penn State Breazeale Nuclear Reactor was used as the neutron source in the experiments. The high neutron flux allows for accelerated testing of the SER phenomenon. The experiments and analyses have been performed only on soft errors due to thermal neutrons. Various memory chips manufactured by different vendors were tested at various supply voltages and reactor power levels. The effect of 10B reaction caused by thermal neutron absorption on SER is discussed.
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U2 - 10.1016/j.nima.2007.04.049
DO - 10.1016/j.nima.2007.04.049
M3 - Article
AN - SCOPUS:34547680443
SN - 0168-9002
VL - 579
SP - 252
EP - 255
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1
ER -