New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing

S. J. Fonash; M. Ozaita; M. Okandan; O. O. Awadelkarim; Y. D. Chan

New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing

S. J. Fonash, M. Ozaita, M. Okandan, O. O. Awadelkarim, Y. D. Chan

Research output: Contribution to conference › Paper › peer-review

Abstract

It is recently demonstrated that gate-definition reactive ion etching of polycrystalline silicon (poly-Si) gate, 0.5 μm channel length MOSFET transistors can cause plasma exposure edge damage in addition to the well-known plasma charging current damage. Here this paper focuses more closely on this gate edge damage and shows for the first time, that it manifests itself as distinct trapping and detrapping localized states at or near the SiO₂/substrate Si interface in the thin gate oxide around the gate perimeter.

Original language	English (US)
Pages	84-86
Number of pages	3
State	Published - 1996
Event	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA Duration: May 13 1996 → May 14 1996

Other

Other	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
City	Santa Clara, CA, USA
Period	5/13/96 → 5/14/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing",

abstract = "It is recently demonstrated that gate-definition reactive ion etching of polycrystalline silicon (poly-Si) gate, 0.5 μm channel length MOSFET transistors can cause plasma exposure edge damage in addition to the well-known plasma charging current damage. Here this paper focuses more closely on this gate edge damage and shows for the first time, that it manifests itself as distinct trapping and detrapping localized states at or near the SiO2/substrate Si interface in the thin gate oxide around the gate perimeter.",

author = "Fonash, {S. J.} and M. Ozaita and M. Okandan and Awadelkarim, {O. O.} and Chan, {Y. D.}",

year = "1996",

language = "English (US)",

pages = "84--86",

note = "Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 13-05-1996 Through 14-05-1996",

}

New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing. / Fonash, S. J.; Ozaita, M.; Okandan, M. et al.
1996. 84-86 Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing

AU - Fonash, S. J.

AU - Ozaita, M.

AU - Okandan, M.

AU - Awadelkarim, O. O.

AU - Chan, Y. D.

PY - 1996

Y1 - 1996

N2 - It is recently demonstrated that gate-definition reactive ion etching of polycrystalline silicon (poly-Si) gate, 0.5 μm channel length MOSFET transistors can cause plasma exposure edge damage in addition to the well-known plasma charging current damage. Here this paper focuses more closely on this gate edge damage and shows for the first time, that it manifests itself as distinct trapping and detrapping localized states at or near the SiO2/substrate Si interface in the thin gate oxide around the gate perimeter.

AB - It is recently demonstrated that gate-definition reactive ion etching of polycrystalline silicon (poly-Si) gate, 0.5 μm channel length MOSFET transistors can cause plasma exposure edge damage in addition to the well-known plasma charging current damage. Here this paper focuses more closely on this gate edge damage and shows for the first time, that it manifests itself as distinct trapping and detrapping localized states at or near the SiO2/substrate Si interface in the thin gate oxide around the gate perimeter.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029702619&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029702619

SP - 84

EP - 86

T2 - Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 13 May 1996 through 14 May 1996

ER -

New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing

Abstract

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All Science Journal Classification (ASJC) codes

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