New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Mattia Cattelan; Brian Markman; Giacomo Lucchini; Pranab Kumar Das; Ivana Vobornik; Joshua Alexander Robinson; Stefano Agnoli; Gaetano Granozzi

doi:10.1021/acs.chemmater.5b01170

New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Mattia Cattelan, Brian Markman, Giacomo Lucchini, Pranab Kumar Das, Ivana Vobornik, Joshua Alexander Robinson, Stefano Agnoli, Gaetano Granozzi

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Tungsten disulfide (WS₂) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS₂ structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS₂ layer obtained at room temperature transforms to the 2H-WS₂ phase at about 400°C. Low energy electron diffraction confirms the existence of van der Waals epitaxy between WS₂ and h-BN and gold substrates. The measured band structure indicates that the WS₂ electronic structure is not affected by the interaction with the h-BN and gold substrates.

Original language	English (US)
Pages (from-to)	4105-4113
Number of pages	9
Journal	Chemistry of Materials
Volume	27
Issue number	11
DOIs	https://doi.org/10.1021/acs.chemmater.5b01170
State	Published - Jun 9 2015

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/acs.chemmater.5b01170

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title = "New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials",

abstract = "Tungsten disulfide (WS2) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS2 structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS2 layer obtained at room temperature transforms to the 2H-WS2 phase at about 400°C. Low energy electron diffraction confirms the existence of van der Waals epitaxy between WS2 and h-BN and gold substrates. The measured band structure indicates that the WS2 electronic structure is not affected by the interaction with the h-BN and gold substrates.",

author = "Mattia Cattelan and Brian Markman and Giacomo Lucchini and Das, {Pranab Kumar} and Ivana Vobornik and Robinson, {Joshua Alexander} and Stefano Agnoli and Gaetano Granozzi",

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T1 - New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

AU - Cattelan, Mattia

AU - Markman, Brian

AU - Lucchini, Giacomo

AU - Das, Pranab Kumar

AU - Vobornik, Ivana

AU - Robinson, Joshua Alexander

AU - Agnoli, Stefano

AU - Granozzi, Gaetano

PY - 2015/6/9

Y1 - 2015/6/9

N2 - Tungsten disulfide (WS2) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS2 structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS2 layer obtained at room temperature transforms to the 2H-WS2 phase at about 400°C. Low energy electron diffraction confirms the existence of van der Waals epitaxy between WS2 and h-BN and gold substrates. The measured band structure indicates that the WS2 electronic structure is not affected by the interaction with the h-BN and gold substrates.

AB - Tungsten disulfide (WS2) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS2 structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS2 layer obtained at room temperature transforms to the 2H-WS2 phase at about 400°C. Low energy electron diffraction confirms the existence of van der Waals epitaxy between WS2 and h-BN and gold substrates. The measured band structure indicates that the WS2 electronic structure is not affected by the interaction with the h-BN and gold substrates.

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New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Abstract

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