Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

L. S. Yu; D. J. Qiao; Q. J. Xing; S. S. Lau; K. S. Boutros; J. M. Redwing

doi:10.1063/1.121767

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

L. S. Yu
, D. J. Qiao
, Q. J. Xing
, S. S. Lau
, K. S. Boutros
, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

The electrical characteristics of Ni and Ti Schottky barriers on n-Al_0.15Ga_0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al_0.15Ga_0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.

Original language	English (US)
Pages (from-to)	238-240
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	2
DOIs	https://doi.org/10.1063/1.121767
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.121767

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title = "Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates",

abstract = "The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.",

author = "Yu, \{L. S.\} and Qiao, \{D. J.\} and Xing, \{Q. J.\} and Lau, \{S. S.\} and Boutros, \{K. S.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1063/1.121767",

language = "English (US)",

volume = "73",

pages = "238--240",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

AU - Yu, L. S.

AU - Qiao, D. J.

AU - Xing, Q. J.

AU - Lau, S. S.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.

AB - The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3-0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.

UR - https://www.scopus.com/pages/publications/0001142431

UR - https://www.scopus.com/pages/publications/0001142431#tab=citedBy

U2 - 10.1063/1.121767

DO - 10.1063/1.121767

M3 - Article

AN - SCOPUS:0001142431

SN - 0003-6951

VL - 73

SP - 238

EP - 240

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

Abstract

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