Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces

Elizabeth A. Paisley; Michael T. Brumbach; Christopher T. Shelton; Andrew A. Allerman; Stanley Atcitty; Christina M. Rost; James A. Ohlhausen; Barney L. Doyle; Zlatko Sitar; Jon Paul Maria; Jon F. Ihlefeld

doi:10.1063/1.5013605

Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces

Elizabeth A. Paisley, Michael T. Brumbach, Christopher T. Shelton, Andrew A. Allerman, Stanley Atcitty, Christina M. Rost, James A. Ohlhausen, Barney L. Doyle, Zlatko Sitar, Jon Paul Maria, Jon F. Ihlefeld

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4 Scopus citations

Abstract

GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.

Original language	English (US)
Article number	092903
Journal	Applied Physics Letters
Volume	112
Issue number	9
DOIs	https://doi.org/10.1063/1.5013605
State	Published - Feb 26 2018

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5013605

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title = "Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces",

abstract = "GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.",

author = "Paisley, {Elizabeth A.} and Brumbach, {Michael T.} and Shelton, {Christopher T.} and Allerman, {Andrew A.} and Stanley Atcitty and Rost, {Christina M.} and Ohlhausen, {James A.} and Doyle, {Barney L.} and Zlatko Sitar and Maria, {Jon Paul} and Ihlefeld, {Jon F.}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

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day = "26",

doi = "10.1063/1.5013605",

language = "English (US)",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces

AU - Paisley, Elizabeth A.

AU - Brumbach, Michael T.

AU - Shelton, Christopher T.

AU - Allerman, Andrew A.

AU - Atcitty, Stanley

AU - Rost, Christina M.

AU - Ohlhausen, James A.

AU - Doyle, Barney L.

AU - Sitar, Zlatko

AU - Maria, Jon Paul

AU - Ihlefeld, Jon F.

PY - 2018/2/26

Y1 - 2018/2/26

N2 - GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.

AB - GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial (111)-oriented MgO films on (0001)-oriented Ga-polar GaN as a case study. For identical cleaning and MgO growth conditions, GaN subsurface oxygen impurities influence the GaN bare surface band bending and the ultimate band offset to MgO heterolayers. As the GaN surface oxygen concentration increases from an atomic concentration of 0.9% to 3.4%, the valence band offset to MgO decreases from 1.68 eV to 1.29 eV, respectively. This study highlights the sensitivity of the oxide/nitride interface electronic structure to GaN epilayer preparation and growth conditions.

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M1 - 092903

ER -

Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces

Abstract

All Science Journal Classification (ASJC) codes

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