Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Varistha Chobpattana; Junwoo Son; Jeremy J.M. Law; Roman Engel-Herbert; Cheng Ying Huang; Susanne Stemmer

doi:10.1063/1.4776656

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Varistha Chobpattana, Junwoo Son, Jeremy J.M. Law, Roman Engel-Herbert, Cheng Ying Huang, Susanne Stemmer

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81 Scopus citations

Abstract

We report on the electrical characteristics of HfO₂ and HfO ₂/Al₂O₃ gate dielectrics deposited on n-In _0.53Ga_0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface cleaning procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 10 ¹² cm^-2 eV^-1 near midgap. It is shown that the benefits of the nitrogen plasma surface cleaning procedure are independent of the specific dielectric.

Original language	English (US)
Article number	022907
Journal	Applied Physics Letters
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.4776656
State	Published - Jan 14 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4776656

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@article{f3a704f4189c4083be239166b3cdfc93,

title = "Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities",

abstract = "We report on the electrical characteristics of HfO2 and HfO 2/Al2O3 gate dielectrics deposited on n-In 0.53Ga0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface cleaning procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 10 12 cm-2 eV-1 near midgap. It is shown that the benefits of the nitrogen plasma surface cleaning procedure are independent of the specific dielectric.",

author = "Varistha Chobpattana and Junwoo Son and Law, {Jeremy J.M.} and Roman Engel-Herbert and Huang, {Cheng Ying} and Susanne Stemmer",

note = "Funding Information: V.C. thanks Adam Kajdos for help with the AFM images. The authors gratefully acknowledge support for this work by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.008). J.S. was supported by NSF (award number ECCS-1125017). A portion of this work was performed in UCSB's nanofabrication facility, which is part of the NSF-funded NNIN network. ",

year = "2013",

month = jan,

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doi = "10.1063/1.4776656",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

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T1 - Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

AU - Chobpattana, Varistha

AU - Son, Junwoo

AU - Law, Jeremy J.M.

AU - Engel-Herbert, Roman

AU - Huang, Cheng Ying

AU - Stemmer, Susanne

N1 - Funding Information: V.C. thanks Adam Kajdos for help with the AFM images. The authors gratefully acknowledge support for this work by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.008). J.S. was supported by NSF (award number ECCS-1125017). A portion of this work was performed in UCSB's nanofabrication facility, which is part of the NSF-funded NNIN network.

PY - 2013/1/14

Y1 - 2013/1/14

N2 - We report on the electrical characteristics of HfO2 and HfO 2/Al2O3 gate dielectrics deposited on n-In 0.53Ga0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface cleaning procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 10 12 cm-2 eV-1 near midgap. It is shown that the benefits of the nitrogen plasma surface cleaning procedure are independent of the specific dielectric.

AB - We report on the electrical characteristics of HfO2 and HfO 2/Al2O3 gate dielectrics deposited on n-In 0.53Ga0.47As by atomic layer deposition, after in-situ hydrogen or nitrogen plasma surface cleaning procedures, respectively. It is shown that alternating cycles of nitrogen plasma and trimethylaluminum prior to growth allow for highly scaled dielectrics with equivalent oxide thicknesses down to 0.6 nm and interface trap densities that are below 2.5 × 10 12 cm-2 eV-1 near midgap. It is shown that the benefits of the nitrogen plasma surface cleaning procedure are independent of the specific dielectric.

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DO - 10.1063/1.4776656

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JF - Applied Physics Letters

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ER -

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

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