Non-invasive nature of corona charging on thermal Si/SiO2 structures

M. Dautrich; Patrick M. Lenahan; A. Y. Kang; J. F. Conley

doi:10.1109/IRWS.2003.1283290

Non-invasive nature of corona charging on thermal Si/SiO₂ structures

M. Dautrich, Patrick M. Lenahan, A. Y. Kang, J. F. Conley

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO₂ system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

Original language	English (US)
Title of host publication	2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	7-9
Number of pages	3
Volume	2003-January
ISBN (Electronic)	0780381572
DOIs	https://doi.org/10.1109/IRWS.2003.1283290
State	Published - 2003
Event	2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States Duration: Oct 20 2003 → Oct 23 2003

Other

Other	2003 IEEE International Integrated Reliability Workshop, IRW 2003
Country/Territory	United States
City	Lake Tahoe
Period	10/20/03 → 10/23/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IRWS.2003.1283290

Cite this

@inproceedings{574a6c97ee064c82b5a584458da00a4f,

title = "Non-invasive nature of corona charging on thermal Si/SiO2 structures",

abstract = "The corona charging technique is utilized in commercial semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argues that the corona charging approaches are inherently unreliable and invasive. In this work we show that low-field corona biasing is essential non-invasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.",

author = "M. Dautrich and Lenahan, {Patrick M.} and Kang, {A. Y.} and Conley, {J. F.}",

year = "2003",

doi = "10.1109/IRWS.2003.1283290",

language = "English (US)",

volume = "2003-January",

pages = "7--9",

booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",

}

Dautrich, M, Lenahan, PM, Kang, AY & Conley, JF 2003, Non-invasive nature of corona charging on thermal Si/SiO₂ structures. in 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. vol. 2003-January, 1283290, Institute of Electrical and Electronics Engineers Inc., pp. 7-9, 2003 IEEE International Integrated Reliability Workshop, IRW 2003, Lake Tahoe, United States, 10/20/03. https://doi.org/10.1109/IRWS.2003.1283290

Non-invasive nature of corona charging on thermal Si/SiO₂ structures. / Dautrich, M.; Lenahan, Patrick M.; Kang, A. Y. et al.
2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 7-9 1283290.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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