Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

Keyphrases

• Thermal Annealing 100%
• GaN HEMT 100%
• Gamma Irradiation 100%
• Electron Wind Force 100%
• Radiation Damage 33%
• Electron Momentum 33%
• High Current Density 16%
• Favorable Outcome 16%
• Raman Spectroscopy 16%
• Gate Leakage Current 16%
• Annealing Process 16%
• Dose Rate 16%
• Threshold Voltage 16%
• Polymeric Surfaces 16%
• Post-irradiation 16%
• Momentum Forcing 16%
• Damage Mitigation 16%
• Surface Passivation 16%
• Saturation Current 16%
• Carrier Scattering 16%
• Maximum Transconductance 16%
• 60Co gamma 16%

Engineering

• Radiation Effect 100%
• High Current Density 50%
• Passivation 50%
• Dose Rate 50%

Material Science

• Annealing 100%
• Radiation Damage 40%
• Density 20%
• Transistor 20%
• Electron Mobility 20%
• Raman Spectroscopy 20%
• Surface Passivation 20%