Non-volatile control of 2DEG conductivity at oxide interfaces

Shin Ik Kim; Dai Hong Kim; Yoonjung Kim; Seon Young Moon; Min Gyu Kang; Jong Kwon Choi; Ho Won Jang; Seong Keun Kim; Ji Won Choi; Seok Jin Yoon; Hye Jung Chang; Chong Yun Kang; Suyoun Lee; Seong Hyeon Hong; Jin Sang Kim; Seung Hyub Baek

doi:10.1002/adma.201301097

Non-volatile control of 2DEG conductivity at oxide interfaces

Shin Ik Kim
, Dai Hong Kim
, Yoonjung Kim
, Seon Young Moon
, Min Gyu Kang
, Jong Kwon Choi
, Ho Won Jang
, Seong Keun Kim
, Ji Won Choi
, Seok Jin Yoon
, Hye Jung Chang
, Chong Yun Kang
, Suyoun Lee
, Seong Hyeon Hong
, Jin Sang Kim
, Seung Hyub Baek

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr_0.2Ti _0.8)O₃ overlayer on 2DEG (LaAlO₃/SrTiO ₃), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

Original language	English (US)
Pages (from-to)	4612-4617
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	33
DOIs	https://doi.org/10.1002/adma.201301097
State	Published - Sep 6 2013

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201301097

Cite this

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title = "Non-volatile control of 2DEG conductivity at oxide interfaces",

abstract = "The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.",

author = "Kim, \{Shin Ik\} and Kim, \{Dai Hong\} and Yoonjung Kim and Moon, \{Seon Young\} and Kang, \{Min Gyu\} and Choi, \{Jong Kwon\} and Jang, \{Ho Won\} and Kim, \{Seong Keun\} and Choi, \{Ji Won\} and Yoon, \{Seok Jin\} and Chang, \{Hye Jung\} and Kang, \{Chong Yun\} and Suyoun Lee and Hong, \{Seong Hyeon\} and Kim, \{Jin Sang\} and Baek, \{Seung Hyub\}",

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doi = "10.1002/adma.201301097",

language = "English (US)",

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journal = "Advanced Materials",

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TY - JOUR

T1 - Non-volatile control of 2DEG conductivity at oxide interfaces

AU - Kim, Shin Ik

AU - Kim, Dai Hong

AU - Kim, Yoonjung

AU - Moon, Seon Young

AU - Kang, Min Gyu

AU - Choi, Jong Kwon

AU - Jang, Ho Won

AU - Kim, Seong Keun

AU - Choi, Ji Won

AU - Yoon, Seok Jin

AU - Chang, Hye Jung

AU - Kang, Chong Yun

AU - Lee, Suyoun

AU - Hong, Seong Hyeon

AU - Kim, Jin Sang

AU - Baek, Seung Hyub

PY - 2013/9/6

Y1 - 2013/9/6

N2 - The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

AB - The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

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UR - https://www.scopus.com/pages/publications/84883489629#tab=citedBy

U2 - 10.1002/adma.201301097

DO - 10.1002/adma.201301097

M3 - Article

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AN - SCOPUS:84883489629

SN - 0935-9648

VL - 25

SP - 4612

EP - 4617

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Non-volatile control of 2DEG conductivity at oxide interfaces

Abstract

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