Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling

The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.