Noninvasive nature of corona charging on thermal Si/SiO 2 structures

M. S. Dautrich; P. M. Lenahan; A. Y. Kang; J. F. Conley

doi:10.1063/1.1789576

Noninvasive nature of corona charging on thermal Si/SiO ₂ structures

M. S. Dautrich, P. M. Lenahan, A. Y. Kang, J. F. Conley

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The application of corona charging technique in thermal Si/SiO ₂ semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

Original language	English (US)
Pages (from-to)	1844-1845
Number of pages	2
Journal	Applied Physics Letters
Volume	85
Issue number	10
DOIs	https://doi.org/10.1063/1.1789576
State	Published - Sep 6 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1789576

Cite this

@article{d2045754ae334be7a083ffacd0ff2b5a,

title = "Noninvasive nature of corona charging on thermal Si/SiO 2 structures",

abstract = "The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.",

author = "Dautrich, {M. S.} and Lenahan, {P. M.} and Kang, {A. Y.} and Conley, {J. F.}",

year = "2004",

month = sep,

day = "6",

doi = "10.1063/1.1789576",

language = "English (US)",

volume = "85",

pages = "1844--1845",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Noninvasive nature of corona charging on thermal Si/SiO 2 structures

AU - Dautrich, M. S.

AU - Lenahan, P. M.

AU - Kang, A. Y.

AU - Conley, J. F.

PY - 2004/9/6

Y1 - 2004/9/6

N2 - The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

AB - The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

UR - http://www.scopus.com/inward/record.url?scp=4944221095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944221095&partnerID=8YFLogxK

U2 - 10.1063/1.1789576

DO - 10.1063/1.1789576

M3 - Article

AN - SCOPUS:4944221095

SN - 0003-6951

VL - 85

SP - 1844

EP - 1845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Noninvasive nature of corona charging on thermal Si/SiO ₂ structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this