Noninvasive nature of corona charging on thermal Si/SiO 2 structures

M. S. Dautrich; P. M. Lenahan; A. Y. Kang; J. F. Conley

doi:10.1063/1.1789576

Noninvasive nature of corona charging on thermal Si/SiO ₂ structures

M. S. Dautrich
, P. M. Lenahan
, A. Y. Kang
, J. F. Conley

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The application of corona charging technique in thermal Si/SiO ₂ semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

Original language	English (US)
Pages (from-to)	1844-1845
Number of pages	2
Journal	Applied Physics Letters
Volume	85
Issue number	10
DOIs	https://doi.org/10.1063/1.1789576
State	Published - Sep 6 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1789576

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title = "Noninvasive nature of corona charging on thermal Si/SiO 2 structures",

abstract = "The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.",

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AU - Dautrich, M. S.

AU - Lenahan, P. M.

AU - Kang, A. Y.

AU - Conley, J. F.

PY - 2004/9/6

Y1 - 2004/9/6

N2 - The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

AB - The application of corona charging technique in thermal Si/SiO 2 semiconductor devices and electron spin resonance (ESR) experiments was analyzed. Investigation shows that the corona charging techniques were inherently unreliable and invasive. It was found that high-field stressing via corona biasing was more rough as compared to the high-field stressing via gate biasing. The results show that low-field corona biasing was noninvasive and could be used for the reliability characterization of defect structures.

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UR - https://www.scopus.com/pages/publications/4944221095#tab=citedBy

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Noninvasive nature of corona charging on thermal Si/SiO ₂ structures

Abstract

All Science Journal Classification (ASJC) codes

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