Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

P. Michael Preetam Raj; Amlan Ranjan Kalita; Mantu K. Hudait; Shashank Priya; Souvik Kundu

doi:10.1080/10584587.2018.1521667

Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

P. Michael Preetam Raj, Amlan Ranjan Kalita, Mantu K. Hudait, Shashank Priya, Souvik Kundu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Pt/BaTiO ₃ -BiFeO ₃ /Nb:SrTiO ₃ based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.

Original language	English (US)
Pages (from-to)	16-27
Number of pages	12
Journal	Integrated Ferroelectrics
Volume	192
Issue number	1
DOIs	https://doi.org/10.1080/10584587.2018.1521667
State	Published - Sep 2 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584587.2018.1521667

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title = "Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application",

abstract = " Pt/BaTiO 3 -BiFeO 3 /Nb:SrTiO 3 based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.",

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T1 - Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

AU - Michael Preetam Raj, P.

AU - Ranjan Kalita, Amlan

AU - Hudait, Mantu K.

AU - Priya, Shashank

AU - Kundu, Souvik

PY - 2018/9/2

Y1 - 2018/9/2

N2 - Pt/BaTiO 3 -BiFeO 3 /Nb:SrTiO 3 based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.

AB - Pt/BaTiO 3 -BiFeO 3 /Nb:SrTiO 3 based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.

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JO - Integrated Ferroelectrics

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Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

Abstract

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