Abstract
Pt/BaTiO 3 -BiFeO 3 /Nb:SrTiO 3 based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 16-27 |
| Number of pages | 12 |
| Journal | Integrated Ferroelectrics |
| Volume | 192 |
| Issue number | 1 |
| DOIs | |
| State | Published - Sep 2 2018 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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