TY - JOUR
T1 - Nonlinear I-V behavior in colossal permittivity ceramic:(Nb+In)co-doped rutile TiO2
AU - Li, Jinglei
AU - Li, Fei
AU - Xu, Zhuo
AU - Zhuang, Yongyong
AU - Zhang, Shujun
N1 - Funding Information:
This work was supported by National Natural Science Foundation of China (Grant nos. 51102193 and 51372196 ), the China Postdoctoral Science Foundation ( 2012M521761 and 2014T70914 ), the 111 Project ( B14040 ), International Science & Technology Cooperation Program of China under Grant no. 2015DFA51100 and the Fundamental Research Funds for the Central Universities . The SEM (or TEM) work was done at International Center for Dielectric Research (ICDR), Xi׳an Jiaotong University, Xi׳an, China. The authors also thank Yongyong Zhuang for his help in using SEM.
Publisher Copyright:
© 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - The new (Nb+In) co-doped TiO2 ceramics recently stimulated considerable attention due to their colossal permittivity (CP) (~100,000). In this research, the 3 mol% (Nb+In) co-doped TiO2 ceramics were synthesized by an standard solid-state reaction method. Phase structure was studied by XRD and Raman, which showed that all samples were in pure rutile phase. The elements distribution was tested by the SEM-EDS, indicating that the Nb and In ions were homogeneously distributed in the grain and grain boundary. Dielectric properties and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The existence of CP and nonlinear I-V behavior in sample had been explained by an internal barrier layer capacitance (IBLC) model, which consists of n-type semiconductor grains and insulating grain boundaries.
AB - The new (Nb+In) co-doped TiO2 ceramics recently stimulated considerable attention due to their colossal permittivity (CP) (~100,000). In this research, the 3 mol% (Nb+In) co-doped TiO2 ceramics were synthesized by an standard solid-state reaction method. Phase structure was studied by XRD and Raman, which showed that all samples were in pure rutile phase. The elements distribution was tested by the SEM-EDS, indicating that the Nb and In ions were homogeneously distributed in the grain and grain boundary. Dielectric properties and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The existence of CP and nonlinear I-V behavior in sample had been explained by an internal barrier layer capacitance (IBLC) model, which consists of n-type semiconductor grains and insulating grain boundaries.
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U2 - 10.1016/j.ceramint.2015.03.156
DO - 10.1016/j.ceramint.2015.03.156
M3 - Article
AN - SCOPUS:84937525164
SN - 0272-8842
VL - 41
SP - S798-S803
JO - Ceramics International
JF - Ceramics International
IS - S1
ER -