TY - JOUR
T1 - Nonlinear optical absorption in Bi3TiNbO9 thin films using Z-scan technique
AU - Yang, Bin
AU - Chen, Hengzhi
AU - Zhang, Mingfu
AU - Wang, Feiyan
AU - Cheah, Kokwai
AU - Cao, Wenwu
PY - 2009/9
Y1 - 2009/9
N2 - Bi3TiNbO9 (BTN) thin films with layered perovskite structure were fabricated on fused silica by pulsed laser deposition. The XRD pattern revealed that the films are single-phase perovskite and highly (00l) textured. Their fundamental optical constants, such as band gap, linear refractive index, and linear absorption coefficient, were obtained by optical transmittance measurements. The dispersion relation of the refractive index vs. wavelength follows the single electronic oscillator model. The nonlinear optical absorption of the films was investigated by single beam Z-scan method at a wavelength of 800 nm with laser duration of 80 fs. We obtained the nonlinear absorption coefficient β=1.44×10-7 m/W. The results show that the BTN thin films are promising for applications in absorbing-type optical devices.
AB - Bi3TiNbO9 (BTN) thin films with layered perovskite structure were fabricated on fused silica by pulsed laser deposition. The XRD pattern revealed that the films are single-phase perovskite and highly (00l) textured. Their fundamental optical constants, such as band gap, linear refractive index, and linear absorption coefficient, were obtained by optical transmittance measurements. The dispersion relation of the refractive index vs. wavelength follows the single electronic oscillator model. The nonlinear optical absorption of the films was investigated by single beam Z-scan method at a wavelength of 800 nm with laser duration of 80 fs. We obtained the nonlinear absorption coefficient β=1.44×10-7 m/W. The results show that the BTN thin films are promising for applications in absorbing-type optical devices.
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U2 - 10.1007/s00339-009-5136-z
DO - 10.1007/s00339-009-5136-z
M3 - Article
AN - SCOPUS:70350567758
SN - 0947-8396
VL - 96
SP - 1017
EP - 1021
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 4
ER -