Nonlinear transport imaging by scanning impedance microscopy

J. Shin, V. Meunier, A. P. Baddorf, S. V. Kalinin

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Scanning probe microscopy is an established tool for characterization of the linear static and frequency-dependent lateral electronic transport in materials and devices at the nanoscale. In this letter, a modified scanning impedance microscopy (SIM) technique is proposed to extend the nanoscale transport measurements of intrinsic material properties to the nonlinear regime, through detection of frequency harmonics, and exemplified by a detailed study of a prototypical metal-semiconductor interface. The imaging mechanism, surface - tip contrast transfer, optimal experimental conditions, and potential applications of nonlinear SIM are discussed. This technique can be readily transferred to most cantilever-based scanning probe microscopes.

Original languageEnglish (US)
Pages (from-to)4240-4242
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - Nov 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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