Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

Zhuang En Fu, Piumi I. Samarawickrama, Yanglin Zhu, Zhiqiang Mao, Wenyong Wang, Kenji Watanabe, Takashi Taniguchi, Jinke Tang, John Ackerman, Jifa Tian

Research output: Contribution to journalArticlepeer-review

Abstract

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

Original languageEnglish (US)
Pages (from-to)11866-11873
Number of pages8
JournalNano letters
Volume23
Issue number24
DOIs
StatePublished - Dec 27 2023

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

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