Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

Rongming Chu; David Brown; Daniel Zehnder; Xu Chen; Adam Williams; Ray Li; Mary Chen; Scott Newell; Karim Boutros

doi:10.1109/ISPSD.2012.6229067

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell, Karim Boutros

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Scopus citations

Abstract

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

Original language	English (US)
Title of host publication	Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages	237-239
Number of pages	3
DOIs	https://doi.org/10.1109/ISPSD.2012.6229067
State	Published - 2012
Event	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium Duration: Jun 3 2012 → Jun 7 2012

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Country/Territory	Belgium
City	Bruges
Period	6/3/12 → 6/7/12

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/ISPSD.2012.6229067

Cite this

Chu, R., Brown, D., Zehnder, D., Chen, X., Williams, A., Li, R., Chen, M., Newell, S., & Boutros, K. (2012). Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 237-239). Article 6229067 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229067

Chu, Rongming ; Brown, David ; Zehnder, Daniel et al. / Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. pp. 237-239 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{eaf9d9d0332945d1b42eec9a9c68ac60,

title = "Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C",

abstract = "We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.",

author = "Rongming Chu and David Brown and Daniel Zehnder and Xu Chen and Adam Williams and Ray Li and Mary Chen and Scott Newell and Karim Boutros",

year = "2012",

doi = "10.1109/ISPSD.2012.6229067",

language = "English (US)",

isbn = "9781457715952",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

pages = "237--239",

booktitle = "Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12",

note = "24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 ; Conference date: 03-06-2012 Through 07-06-2012",

}

Chu, R, Brown, D, Zehnder, D, Chen, X, Williams, A, Li, R, Chen, M, Newell, S & Boutros, K 2012, Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. in Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12., 6229067, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 237-239, 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12, Bruges, Belgium, 6/3/12. https://doi.org/10.1109/ISPSD.2012.6229067

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. / Chu, Rongming; Brown, David; Zehnder, Daniel et al.
Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. p. 237-239 6229067 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

AU - Chu, Rongming

AU - Brown, David

AU - Zehnder, Daniel

AU - Chen, Xu

AU - Williams, Adam

AU - Li, Ray

AU - Chen, Mary

AU - Newell, Scott

AU - Boutros, Karim

PY - 2012

Y1 - 2012

N2 - We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

AB - We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200°C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

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DO - 10.1109/ISPSD.2012.6229067

M3 - Conference contribution

AN - SCOPUS:84864767848

SN - 9781457715952

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 237

EP - 239

BT - Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12

T2 - 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12

Y2 - 3 June 2012 through 7 June 2012

ER -

Chu R, Brown D, Zehnder D, Chen X, Williams A, Li R et al. Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. 2012. p. 237-239. 6229067. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2012.6229067

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200°C

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